A 19 GHz low phase noise HFET VCO MMIC

Author

Matsuzuka, T. ; Kawakami, K. ; Aihara, Y. ; Ishikawa, T. ; Komaru, M. ; Matsuda, Y.

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

2

fYear

2003

Firstpage

725

Abstract

A 19 GHz extremely low phase noise voltage controlled oscillator (VCO) MMIC is presented. To reduce the phase noise of the VCO, a heterostructure field effect transistor (HFET) is used as the active device, because its low frequency noise properties are superior to that of high electron mobility transistors (HEMT). This VCO showed a typical phase noise of -120 dBc/Hz at 1 MHz offset from the carrier. This performance is better than other VCOs operating above 10 GHz. The measured tuning range is 400 MHz and output power is 2 dBm. The fabricated MMIC chip size is 2.7 mm/spl times/1.4 mm.

Keywords

MMIC oscillators; circuit tuning; field effect MIMIC; integrated circuit design; integrated circuit manufacture; integrated circuit noise; phase noise; voltage-controlled oscillators; 1.4 mm; 19 GHz; 2.7 mm; HEMT; HFET low frequency noise properties; VCO tuning range/output power; carrier offset phase noise; heterostructure field effect transistors; high electron mobility transistors; low phase noise HFET VCO MMIC; voltage controlled oscillators; Field effect MMICs; HEMTs; Low-frequency noise; MODFETs; Phase noise; Power generation; Power measurement; Semiconductor device measurement; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212474

Filename

1212474