DocumentCode
1645258
Title
An anode hole injection percolation model for oxide breakdown-the "doom\´s day" scenario revisited
Author
Alam, M.A. ; Bude, J. ; Weir, B. ; Silverman, P. ; Ghetti, A. ; Monroe, D. ; Cheung, K.P. ; Moccio, S.
Author_Institution
Bell Lab., Murray Hill, NJ, USA
fYear
1999
Firstpage
715
Lastpage
718
Abstract
A comprehensive percolation model is used to explore the role of non-uniform trap generation process on oxide breakdown. We show that this non-uniform trap generation (due to SILC and roughness induced localization) makes interpretation of experimental data difficult and can lead to incorrect projections for reliability of ultra-thin oxides.
Keywords
charge injection; electric breakdown; hole traps; leakage currents; percolation; anode hole injection; nonuniform trap generation; oxide breakdown; percolation model; roughness induced localization; stress induced leakage current; ultrathin oxide reliability; Anodes; Electric breakdown; Electron traps; Feedback; Lead compounds; Predictive models; Rough surfaces; Stress; Surface roughness; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824251
Filename
824251
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