CoSi/sub 2/ integrated fuses on poly silicon for low voltage 0.18 /spl mu/m CMOS applications

Author

Kalnitsky, A. ; Saadat, I. ; Bergemont, A. ; Francis, P.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

fYear

1999

Firstpage

765

Lastpage

768

Abstract

The manufacturability and integration of the CoSi/sub 2//poly-Si fuse element for sub-0.18 /spl mu/m regime CMOS is demonstrated and evaluated. This paper addresses the mechanism and the driver circuit challenges for fuse programming (given the low operating voltage nature of the 0.18 /spl mu/m technology). This includes exploring different options to deliver the required programming energy, yet complying with low voltage limitation of the technology. Finally, it concludes by presenting the fuse programming characteristics and reliability studies of the high voltage (HV) driver of the circuit.

Keywords

CMOS integrated circuits; cobalt compounds; driver circuits; electric fuses; integrated circuit layout; integrated circuit reliability; low-power electronics; 0.18 mum; 3.5 V; 5 V; CoSi/sub 2/ integrated fuses; CoSi/sub 2/-Si; driver circuit challenges; fuse programming; high voltage driver; low operating voltage; low voltage CMOS; manufacturability; polysilicon; programming energy; reliability; CMOS technology; Dielectric materials; Driver circuits; Fuses; Immune system; Low voltage; MOSFETs; Resistors; Schottky diodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824263

Filename

824263