A DC-3 GHz cryogenic AlGaAs/GaAs HBT low noise MMIC amplifier with 0.15 dB noise figure

Author

Kobayashi, K.W. ; Fernandez, J.E. ; Kobayashi, J.H. ; Leung, M. ; Oki, A.K. ; Tran, L.T. ; Lammert, M. ; Block, T.R. ; Streit, D.C.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1999

Firstpage

775

Lastpage

778

Abstract

This work reports on the lowest noise figure so far obtained for a bipolar monolithic microwave integrated circuit (MMIC) amplifier. The amplifier is based on an ultrahigh current gain AlGaAs/GaAs HBT technology with peak DC beta and f/sub T/ of 800 and >40 GHz, respectively. At a cryogenic temperature of 12 K, the HBT LNA achieves 36 dB gain and less than 0.2 dB noise figure over a DC-2 GHz bandwidth. The minimum amplifier noise figure is 0.15 dB. The wide band HBT MMIC LNA has direct applications to high speed superconductor digital communications as well as deep space receivers and radiometers.

Keywords

III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MMIC; bipolar analogue integrated circuits; cryogenic electronics; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; wideband amplifiers; 0 to 3 GHz; 0.15 dB; 12 K; 36 dB; AlGaAs/GaAs HBT low noise MMIC amplifier; HBT LNA; cryogenic temperature; deep space receivers; high speed superconductor digital communications; low noise figure; minimum amplifier noise figure; peak DC beta; radiometers; ultrahigh current gain AlGaAs/GaAs HBT technology; wide band HBT MMIC LNA; Bipolar integrated circuits; Cryogenics; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Noise figure; Superconducting device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824265

Filename

824265