DocumentCode :
1645687
Title :
Characterization and Modeling of Wire Bond Interconnects up to 100 GHz
Author :
Jahn, Danny ; Reuter, Ralf ; Yin, Yi ; Feige, Jörg
Author_Institution :
TSO Technol. Solutions Organ., Freescale Halbleiter GmbH, Munich
fYear :
2006
Firstpage :
111
Lastpage :
114
Abstract :
This paper presents a model for single and multiple wire bond interconnects for the frequency range from 200 MHz up to 100 GHz, usable in agilents advanced design system (ADS). Test structures for on-wafer s-parameter characterization have been developed. Equivalent circuits for single- and multiple wire bond connections are derived, respectively. The small-signal elements of the equivalent circuit are based on physical parameters and scalable with the bond wire distance and length. The model demonstrates an excellent agreement with measurements in broad frequency range
Keywords :
S-parameters; equivalent circuits; integrated circuit interconnections; lead bonding; 0.2 to 100 GHz; agilents advanced design system; die bonding; equivalent circuits; integrated circuit bonding; millimeter wave measurements; multiple wire bond interconnects; on-wafer s-parameter characterization; single wire bond interconnects; test structures; Bonding; Circuit testing; Equivalent circuits; Frequency; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit modeling; Scattering parameters; Solid modeling; Wire; component: die bonding; integrated circuit bonding; millimeter wave measurements; modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
Type :
conf
DOI :
10.1109/CSICS.2006.319915
Filename :
4109993
Link To Document :
بازگشت