A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for Radar applications

Author

Jardel, O. ; Olivier, Michel ; Lancereau, D. ; Aubry, Raphael ; Chartier, E. ; Sarazin, N. ; Di Forte Poisson, M. ; Piotrowicz, S. ; Stanislawiak, M. ; Rimbert, D. ; Delage, S.L. ; Eudeline, Philippe

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2012

Firstpage

639

Lastpage

642

Abstract

This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34 W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5 GHz] frequency band, in pulsed conditions (50 μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.

Keywords

MMIC power amplifiers; radar applications; GaN; HEMT; MMIC power amplifier; PAE; S-band; device processing; power 30 W; pulse to pulse stability measurements; radar applications; transistor performances; Gain; Gallium nitride; MMICs; Power amplifiers; Stability analysis; Thermal stability; Transistors; Amplifier; GaN HEMT; S-Band; pulse to pulse stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483881