Broadband Dual-Gate Balanced Low Noise Amplifiers

Author

Deal, W.R. ; Biedenbender, M. ; Liu, P.H. ; Namba, C. ; Chen, S. ; Sergant, M. ; Uyeda, J. ; Siddiqui, M. ; Lai, R. ; Allen, B.

Author_Institution

Northrop Grumman Space & Mission Syst., Redondo Beach, CA

fYear

2006

Firstpage

169

Lastpage

172

Abstract

In this paper, we present three MMIC low noise amplifiers using dual-gate GaAs HEMT devices in a balanced amplifier configuration. The designs target three different frequency bands including 5-9 GHz, 9-18 GHz and 20-40 GHz. These dual-gate balanced designs demonstrate the excellent qualities of balanced amplifiers in terms of bandwidth, matched characteristics and bandwidth, but demonstrate higher bandwidth than designs with a single-stage common-source device. Additionally, noise performance is excellent, with the 5-9 GHz LNA demonstrating <1.75-dB NF, the 9-18 GHz LNA <2.75-dB NF and the 20-40 GHz LNA <2.5 dB NF. Demonstrating high gain and excellent bandwidth, the dual-gate devices seem a logical choice for the balanced amplifier topology

Keywords

HEMT integrated circuits; MMIC amplifiers; low noise amplifiers; 5 to 40 GHz; GaAs; MMIC low noise amplifiers; balanced amplifier configuration; broadband amplifiers; dual-gate HEMT devices; dual-gate balanced low noise amplifiers; Bandwidth; Broadband amplifiers; Frequency; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; Noise measurement; Performance gain; Topology; HEMT; Low Noise Amplifier; balanced amplifier; dual-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319888

Filename

4110010