DocumentCode :
1646400
Title :
Electronic density of state at metal/polyimide Langmuir-Blodgett film interface
Author :
Itoh, Eiji ; Iwamoto, Mitsumasa
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Volume :
1
fYear :
1997
Firstpage :
360
Abstract :
Surface potentials of heat-treated polyimide (PI) LB films deposited on Au, Cr and Al electrodes were measured in a dark vacuum vessel at various temperatures as a function of the number of deposited layers. The spatial charge distribution in PI LB films on various electrodes was determined from the relationship between the surface potential and the number of deposited layers. Based on this result, distribution of the density of electronic state in PI LB films was determined. It was experimentally shown that the charge exchange phenomena in PI LB films at the metal/film interface were explained with taking account of interfacial states which exist within the range of 1 nm from the interface and molecular-ion states which exist in the entire range. Further, it was found that the distribution of electronic density of states in polyimides was broadened as the temperature increases
Keywords :
Langmuir-Blodgett films; electronic density of states; heat treatment; interface states; metal-insulator boundaries; polymer films; surface potential; Al; Au; Cr; charge distribution; charge exchange; electronic density of states; heat treatment; interfacial states; metal electrode; polyimide Langmuir-Blodgett film; surface potential; Artificial intelligence; Chemicals; Chromium; Current measurement; Electrodes; Electrostatics; Gold; Polyimides; Surface cleaning; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
Type :
conf
DOI :
10.1109/ICPADM.1997.617605
Filename :
617605
Link To Document :
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