DocumentCode
1646405
Title
Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz
Author
Lenk, F. ; Schott, M. ; Hilsenbeck, J. ; Wurfl, J. ; Heinrich, W.
Author_Institution
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Volume
2
fYear
2003
Firstpage
903
Abstract
Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.
Keywords
III-V semiconductors; MMIC oscillators; bipolar MMIC; circuit tuning; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 77 GHz; GaInP-GaAs; GaInP/GaAs HBT MMIC; monolithic coplanar W-band push-push VCO; phase noise; tuning bandwidth; varactor diode; Circuits; Dry etching; Frequency; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MMICs; MODFETs; Phase noise; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1212515
Filename
1212515
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