Title :
Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS
Author :
Dickson, Timothy O. ; Voinigescu, Sorin P.
Author_Institution :
Edward S. Rogers, Sr. Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
Abstract :
Low-power building blocks for a serial transmitter operating up to 86 Gb/s are designed and implemented in a 130-nm SiGe BiCMOS technology with 150-GHz fT SiGe HBT. Power reduction is achieved by employing a low-voltage 2.5-V BiCMOS logic family, and by trading off bias current for inductive peaking. A serial transmitter test chip is fabricated in a 130-nm, 150-GHz fT SiGe BiCMOS technology. Operation is verified up to 86 Gb/s at room temperature (92Gb/s and 71Gb/s at 0degC and 100degC, respectively). As compared to recent state-of-the-art CMOS results, this work shows that by adding a SiGe HBT to a CMOS process one can achieve double the data rate with half the power dissipation
Keywords :
BiCMOS logic circuits; Ge-Si alloys; heterojunction bipolar transistors; low-power electronics; transmitters; 0 C; 10.7 to 86 Gbit/s; 100 C; 130 nm; 150 GHz; 2.5 V; 92 Gbit/s; BiCMOS integrated circuit; BiCMOS logic family; HBT; SiGe; low-power building blocks; low-power circuits; power reduction; serial transmitter; BiCMOS integrated circuits; CMOS process; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Logic; Silicon germanium; Temperature; Testing; Transmitters; SiGe BiCMOS; VCO; high-speed digital logic; inductive peaking; low-power; multiplexer;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319943
