Title :
Characterization of low-k silica films by Raman spectroscopy
Author :
Alam, A. H M Zahiml
Author_Institution :
Dept. of ECE, International Islamic Univ., Kuala Lumpur, Malaysia
Abstract :
Silica films with low dielectric constant were prepared by means of a sol-gel spin-coating method with and without incorporating pores in the films. Non-destructive Raman spectroscopy studies allow a partial characterization of the low-k silica films, in terms of void presence. The origin of the deferences between the contributions to the pores to the films produced with different preparation conditions is discussed.
Keywords :
Raman spectroscopy; dielectric thin films; sol-gel processing; spin coating; dielectric constant; low-k silica films; nondestructive Raman spectroscopy; preparation conditions; sol-gel spin-coating method; Annealing; Conductivity; Delay effects; Dielectric materials; Infrared spectra; Metallization; Raman scattering; Silicon compounds; Spectroscopy; Very large scale integration;
Conference_Titel :
Multitopic Conference, 2004. Proceedings of INMIC 2004. 8th International
Print_ISBN :
0-7803-8680-9
DOI :
10.1109/INMIC.2004.1492979
