DocumentCode
1648872
Title
Table of contents
fYear
2010
Firstpage
1
Lastpage
18
Abstract
The following topics are dealt with: bipolar circuit; BiCMOS circuit; RF voltage controlled oscillator; mmwave voltage controlled oscillator; high bitrate circuit; C-BiCMOS device; C-bipolar device; mmwave transceiver; BiCMOS component; 4G radio design; power amplifier; thermal limitation; high-frequency modeling; noise modeling; mixer; low noise amplifier; and analog potpourri.
Keywords
4G mobile communication; BiCMOS integrated circuits; analogue integrated circuits; bipolar integrated circuits; low noise amplifiers; millimetre wave oscillators; mixers (circuits); power amplifiers; radiofrequency integrated circuits; transceivers; voltage-controlled oscillators; 4G radio design; BiCMOS circuit; BiCMOS component; C-BiCMOS device; C-bipolar device; RF voltage controlled oscillator; analog potpourri; bipolar circuit; high bitrate circuit; high-frequency modeling; low noise amplifier; mixer; mmwave transceiver; mmwave voltage controlled oscillator; noise modeling; power amplifier; thermal limitation;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location
Austin, TX
ISSN
1088-9299
Print_ISBN
978-1-4244-8578-9
Type
conf
DOI
10.1109/BIPOL.2010.5668095
Filename
5668095
Link To Document