Title :
Influence of Temperature on Modeling Silicon MOSFETs for RF and Wireless Applications
Author :
Caverly, R.H. ; Reifsnyder, J.A.
Author_Institution :
Villanova Univ., Villanova
Abstract :
MOS technology is becoming more widely used in RF and microwave designs. An important aspect of the design process is knowledge of the variation in MOSFET characteristics as functions of both frequency and temperature. This paper presents the results of an investigation of the temperature characteristics of MOSFET RF equivalent circuit parameters, focusing on the gate resistance and device transconductance. The study shows that the polysilicon gate resistance increases with temperature but at a different rate than an isolated polysilicon resistor. In addition, the transconductance was found to decrease with increasing temperature.
Keywords :
MOSFET; elemental semiconductors; equivalent circuits; microwave devices; radiofrequency integrated circuits; silicon; MOSFET; RF applications; RF equivalent circuit; device transconductance; polysilicon gate resistance; wireless applications; Equivalent circuits; MOSFETs; Microwave devices; Microwave technology; Process design; Radio frequency; Resistors; Silicon; Temperature; Transconductance; MOSFETs; Microwave devices; Temperature; UHF FETs; UHF devices;
Conference_Titel :
Sarnoff Symposium, 2006 IEEE
Conference_Location :
Princeton, NJ
Print_ISBN :
978-1-4244-0002-7
DOI :
10.1109/SARNOF.2006.4534779
