• DocumentCode
    1649841
  • Title

    Compact model for layout dependent variability

  • Author

    Aikawa, H. ; Sanuki, T. ; Sakata, A. ; Morifuji, E. ; Yoshimura, H. ; Asami, T. ; Otani, H. ; Oyamatsu, H.

  • Author_Institution
    Adv. Logic Technol. Dept., Toshiba Corp. Semicond. Co., Oita, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We have developed a compact model which deals with MOSFET characteristic variations arising from design layout dependences. It treats many stress related variations and their interactions that are especially important in 45 nm technology node. It is demonstrated that the model can predict MOSFET characteristics used in standard cells with high accuracy.
  • Keywords
    MOSFET; integrated circuit layout; MOSFET characteristic; design layout dependences; layout dependent variability compact model; size 45 nm; CMOS technology; DSL; Electronic mail; Large scale integration; Logic; MOSFET circuits; Manufacturing; Predictive models; Semiconductor device modeling; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424244
  • Filename
    5424244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1649841