• DocumentCode
    1650474
  • Title

    Interface states in HFO2 stacks with metal gate: nature, passivation, generation

  • Author

    Garros, X. ; Reimbold, G. ; Duret, D. ; Leroux, C. ; Guillaumot, B. ; Louveau, O. ; Hobbs, C. ; Martin, F.

  • Author_Institution
    Lab d´´Electron. et de Technol. de l´´Inf., CEA, Centre d´´Etudes Nucleaires de Grenoble, France
  • fYear
    2005
  • Firstpage
    55
  • Lastpage
    60
  • Keywords
    MIS devices; dielectric thin films; hafnium compounds; hydrogen; interface states; passivation; rapid thermal annealing; semiconductor device breakdown; semiconductor device reliability; titanium compounds; 425 degC; 530 degC; 900 degC; FGA; H; HfO2-TiN; MOS capacitors; MOS devices; MOSFET process flow; NBTI; Si-SiOx; SiOx-HfO2; atomic plasma annealing; device breakdown; device lifetimes; forming gas anneals; high temperature RTP; interface defects; interface state generation; metal gate dielectric stacks; passivation; reliability; stress interruption; Annealing; Capacitors; Degradation; Hafnium oxide; Hydrogen; Interface states; Passivation; Plasma temperature; Stress; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493062
  • Filename
    1493062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650474