• DocumentCode
    1650844
  • Title

    Reliability of 4MBIT MRAM

  • Author

    Akerman, Johan ; Brown, Philip ; Gajewski, Don ; Griswold, Mark ; Janesky, Jason ; Martin, Matthew ; Mekonnen, Hamere ; Nahas, Joseph J. ; Pietambaram, Srinivas ; Slaughter, J.M. ; Tehrani, Saied

  • Author_Institution
    Freescale Semicond., Chandler, AZ, USA
  • fYear
    2005
  • Firstpage
    163
  • Lastpage
    167
  • Keywords
    SRAM chips; electric breakdown; electromigration; integrated circuit reliability; integrated circuit testing; magnetoresistive devices; thermal stability; tunnelling magnetoresistance; 10 year; 4 Mbit; MRAM arrays; MRAM reliability; MTJ MRAM bit cell; MTJ dielectric breakdown; data retention; electromigration; magnetoresistive random access memory; nonvolatile memory; programming current drift; resistance drift; thermal endurance; CMOS technology; Dielectric breakdown; Electrical resistance measurement; Magnetic fields; Magnetic flux; Magnetic tunneling; Random access memory; Stress measurement; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493078
  • Filename
    1493078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650844