1650869

Novel soft erase and re-fill methods for a P⁺-poly gate nitride trapping non-volatile memory device with excellent endurance and retention properties

Lue, Hang-Ting ; Shih, Yen-Hao ; Hsieh, Kuang Yeu ; Liu, Rich ; Lu, Chih-Yuan

Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu, Taiwan

2005

168

174

SRAM chips; electron traps; flash memories; 2 MB/s; P⁺-poly gate nitride-trapping memory; data Flash; deep-level electrons; electrical annealing effect; endurance; gate injection reduction; hard-to-erase cells; hot-hole induced damages; hot-hole sector erase; low-power programming methods; nonvolatile memory; over-erased cells; programming throughput; retention properties; shallow-level electrons; short negative Fowler-Nordheim channel erase; soft erase; soft re-fill method; trapped electron energy distribution shift; Annealing; Charge carrier processes; Degradation; Electron traps; Flash memory; Hot carriers; Nonvolatile memory; Secondary generated hot electron injection; Throughput; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493079

1493079