Title :
0.9µm pitch pixel CMOS image sensor design methodology
Author :
Itonaga, Kazuichiroh ; Mizuta, Kyohei ; Kataoka, Toyotaka ; Yanagita, Masashi ; Yamauchi, Shintaro ; Ikeda, Harumi ; Haruta, Tsutomu ; Matsumoto, Shizunori ; Harasawa, Masanori ; Matsuda, Takeshi ; Matsumoto, Akira ; Mizuno, Ikue ; Kameshima, Takatoshi ;
Author_Institution :
Semicond. Bus. Group, Sony Corp., Kanagawa, Japan
Abstract :
We demonstrate the first ever 0.9μm pitch pixel CMOS image sensor (CIS), and reveal the problems that are likely to be encountered in future device structures. We have developed a set of guidelines for the design of high quantum efficiency(QE) CISs, and verified their validity by comparing the image quality of 0.9, 1.12, 1.4 and 1.75μm CISs. Furthermore, we propose a simple methodology to optimize more complicated submicron pitch CIS structures.
Keywords :
CMOS image sensors; semiconductor device models; CMOS image sensor design; quantum efficiency; submicron pitch CIS structure; CMOS image sensors; Design methodology; Pixel;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424299
