1651758

Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs

Ohgata, K. ; Ogasawara, M. ; Shiga, K. ; Tsujikawa, S. ; Murakami, E. ; Kato, H. ; Umeda, H. ; Kubota, K.

SProcess & Device Anal. Eng. Dev. Dept., Renesas Technol. Corp., Ibaraki, Japan

2005

372

376

MOSFET; electric potential; life testing; semiconductor device breakdown; semiconductor device reliability; TDDB lifetime; accumulation mode; cathode side hydrogen release model; inversion mode; n-FET; oxide reliability; p-FET; power-law voltage dependence; thin gate oxide PMOSFET; time-dependent dielectric breakdown; voltage acceleration exponents; Breakdown voltage; CMOS technology; Leakage current; Low voltage; MOSFETs; Plasma applications; Plasma measurements; Semiconductor device modeling; Stress; Testing;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493115

1493115