• DocumentCode
    1651876
  • Title

    Germanium for advanced CMOS anno 2009: a SWOT analysis

  • Author

    Caymax, M. ; Eneman, G. ; Bellenger, F. ; Merckling, C. ; Delabie, A. ; Wang, G. ; Loo, R. ; Simoen, E. ; Mitard, J. ; De Jaeger, B. ; Hellings, G. ; De Meyer, K. ; Meuris, M. ; Heyns, M.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Germanium has emerged as an exciting alternative material for high-performance scaled CMOS, however not without difficulties. After a review of the state-of-the-art, mainly focusing on two techniques to passivate the channel/dielectric interface, we analyze the strengths (carrier mobility, band gap), and weaknesses (n-type doping, lattice mismatch and BTBT leakage) of Ge for MOSFETs. We also identify some opportunities and the most important threats for the future of germanium.
  • Keywords
    CMOS integrated circuits; germanium; Ge; MOSFET; SWOT analysis; carrier mobility; channel-dielectric interface; high-performance scaled CMOS; Dielectric materials; Electron mobility; Germanium; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Oxidation; Passivation; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424320
  • Filename
    5424320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651876