Title :
Low breakdown voltage silicon avalanche photodetector implemented by interdigitated p-i-n junctions
Author :
Tseng, Chih-Kuo ; Hung, Wei-Cheng ; Tian, Jhong-Da ; Ku, Kai-Ning ; Na, Neil ; Liu, Yung-Sheng ; Lee, Ming-Chang M.
Author_Institution :
Inst. of Photonics Technol., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
We report a silicon avalanche photodetector with low breakdown voltage of -6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved.
Keywords :
avalanche photodiodes; elemental semiconductors; optical design techniques; p-i-n photodiodes; photodetectors; silicon; Ni-silicide process; Si; avalanche gain; breakdown voltage; dark current; low breakdown voltage silicon avalanche photodetector; narrow interdigitated p-i-n junctions; voltage -6.44 V; Capacitance; Dark current; Junctions; PIN photodiodes; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
