• DocumentCode
    1651981
  • Title

    Impact of MOSFET gate-oxide reliability on CMOS operational amplifiers in a 130-nm low-voltage CMOS process

  • Author

    Chen, Jung-Sheng ; Ker, Ming-Dou

  • Author_Institution
    Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2005
  • Firstpage
    423
  • Lastpage
    430
  • Keywords
    CMOS analogue integrated circuits; MOSFET; buffer circuits; comparators (circuits); dielectric thin films; low-power electronics; operational amplifiers; semiconductor device models; semiconductor device reliability; 130 nm; MOSFET gate-oxide reliability; close-loop configuration; comparator; equivalent device model; folded-cascode structures; low-voltage CMOS; open-loop configuration; operational amplifiers; overstress; phase margin; small-signal gain; small-signal parameters; stacked configuration; two-stage structures; unity-gain buffer; unity-gain frequency; Analog circuits; CMOS analog integrated circuits; CMOS process; CMOS technology; Digital circuits; Electric breakdown; Frequency measurement; Gain measurement; MOSFET circuits; Operational amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493123
  • Filename
    1493123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651981