1652578

Negative bias temperature instability (NBTI) of bulk FinFETs

Kim, Sang-Yun ; Park, Tai-Su ; Lee, Jae-Sung ; Park, Donggun ; Kim, Ki-Nam ; Lee, Jong-Ho

Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Taegu, South Korea

2005

538

540

MOSFET; interface states; semiconductor device reliability; thermal stability; 100 nm; 30 nm; NBTI back bias dependence; bulk FinFET body terminal; fin width; interface trap generation; interface-trap density; negative bias temperature instability; side surface orientation; threshold voltage shift; CMOS technology; Degradation; FinFETs; MOS devices; Negative bias temperature instability; Niobium compounds; Scalability; Stress; Threshold voltage; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493143

1493143