Title :
Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide
Author :
Chen, Jone F. ; Wu, Kuo-Ming ; Lin, Kaung-Wan ; Su, Yan-Kuin ; Hsu, S.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Keywords :
hot carriers; power MOSFET; semiconductor device reliability; 40 V; AC lifetime; DC lifetime; Kirk effect; degradation recovery mechanism; high-voltage LDMOS; hot-carrier reliability; thick gate oxide LDMOS transistors; Application specific integrated circuits; Cost function; Degradation; Electrical resistance measurement; Hot carriers; Kirk field collapse effect; MOSFETs; Microelectronics; Semiconductor device manufacture; Semiconductor device reliability;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493148
