Title :
Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
Author :
Oh, H.J. ; Lin, J.Q. ; Suleiman, S. A B ; Lo, G.Q. ; Kwong, D.L. ; Chi, D.Z. ; Lee, S.J.
Author_Institution :
Dept. of ECE, Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
Plasma-based PH3 passivation technique is extensively studied for the surface passivation of InGaAs substrate prior to high-k deposition. The comparative analysis reveals that the striking improvement is achieved when a stable covalent-bond PxNy layer forms at the interface during plasma PH3-passivation. We report that PxNy passivation layer improves thermal stability of high-k/InGaAs gate stack up to 750°C, which enables successful implementation of InGaAs MOSFETs by self-aligned gate-first process. By adopting PxNy passivation on InGaAs with MOCVD HfAlO and metal gate stack, we achieved subthreshold slope of 98mV/dec, Gm=378mS/mm at Vd=1V, and effective mobility of 2557cm2/Vs at Eeff=0.24MV/cm.
Keywords :
MOCVD; MOSFET; bonds (chemical); gallium arsenide; hafnium compounds; indium compounds; passivation; phosphorus compounds; plasma materials processing; semiconductor growth; thermal stability; InGaAs-PxNy-HfAlO; MOCVD; PH3; covalent bond; effective mobility; high-k dielectric integration; metal gate stack; plasma-based passivation technique; self-aligned gate-first n-MOSFET; subthreshold slope; surface passivation; temperature 750 degC; thermal stability; thermally robust phosphorous nitride interface passivation; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Indium gallium arsenide; MOCVD; MOSFET circuits; Passivation; Plasma stability; Robustness; Thermal stability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424354
