• DocumentCode
    1652865
  • Title

    Stability of capacitance voltage linearity for high-k MIM capacitor

  • Author

    Besset, C. ; Bruyere, S. ; Monsieur, F. ; Boret, S. ; Deloffre, E. ; Vincent, E.

  • Author_Institution
    Central R&D labs, STMicroelectronics, Crolles, France
  • fYear
    2005
  • Firstpage
    586
  • Lastpage
    587
  • Keywords
    BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; MIM devices; capacitance; dielectric materials; stability; Al2O3; BiCMOS technologies; CMOS technologies; Ta2O5; alumina; analog IC MIM applications; capacitance linearity variations; capacitance-voltage linearity stability; high temperature capacitance hysteresis; high-k MIM capacitor; high-k dielectric materials; silica; silicon nitride; tantalum oxide; CMOS technology; Capacitance; Capacitance-voltage characteristics; Frequency; High K dielectric materials; High-K gate dielectrics; Linearity; MIM capacitors; Stability; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493155
  • Filename
    1493155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1652865