DocumentCode :
1652898
Title :
Hot carrier reliability in GaAs PHEMT MMIC power amplifiers
Author :
Chou, Y.C. ; Grundbacher, R. ; Lai, R. ; Li, G.P. ; Kan, Q. ; Yu, M. ; Callejo, L. ; Leung, D. ; Eng, D. ; Block, T. ; Oki, A.
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach, CA, USA
fYear :
2005
Firstpage :
590
Lastpage :
591
Keywords :
HEMT integrated circuits; MMIC power amplifiers; electric current; gallium arsenide; hot carriers; impact ionisation; integrated circuit reliability; life testing; power HEMT; semiconductor device reliability; 0.15 micron; GaAs; HEMT MMIC power amplifiers; drain current; gallium arsenide; gate current; hot carrier reliability; hot carrier stress testing; impact ionization; long-term lifetest; output power; output power degradation; transconductance; Degradation; Gallium arsenide; Hot carriers; Impact ionization; MMICs; PHEMTs; Power amplifiers; Power generation; Space technology; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493157
Filename :
1493157
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1652898
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