1652930

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides

Samanta, Piyas ; Man, Tsz Yin ; Chan, Alain Chun Keung ; Zhang, Qingchun ; Zhu, Chunxiang ; Chan, Mansun

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

2005

594

595

MIS devices; MOS capacitors; dielectric thin films; leakage currents; silicon compounds; stress effects; tantalum compounds; tunnelling; MOS capacitors; SiO₂; TaN; constant current; constant voltage; direct tunneling stress-induced leakage current; metal-oxide-silicon capacitors; nMOS devices; negative bias; silicon dioxide films; tantalum nitride; ultrathin gate oxides; Capacitance-voltage characteristics; Conductive films; Electron traps; Leakage current; MOS capacitors; MOS devices; Silicon compounds; Stress; Tunneling; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493159

1493159