Title :
Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node
Author :
Smith, C.E. ; Adhikari, H. ; Lee, S.-H. ; Coss, B. ; Parthasarathy, S. ; Young, C. ; Sassman, B. ; Cruz, M. ; Hobbs, C. ; Majhi, P. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX, USA
Abstract :
We report on the promise of dual channel materials using FinFETs for high-performance CMOS for sub 22 nm technology node. We demonstrate pFinFETs with all SiGe channel formed by Germanium condensation onto a Silicon-On-Insulator carrier wafer (SiGeOI) followed by cMOS processing. The devices exhibit 3.6X hole mobility enhancement over Silicon (100) while allowing for VTH control with single high-k and metal gate stack. These attributes taken together constitute a simple non-planar cMOS integration sequence with enhanced drive current for future high performance technology nodes.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; hole mobility; semiconductor materials; silicon-on-insulator; CMOS processing; FinFET; SiGe; dual channel materials; enhanced drive current; germanium condensation; high-k/metal gate solution; hole mobility enhancement; nonplanar CMOS integration sequence; silicon-on-insulator carrier wafer; size 22 nm; CMOS process; CMOS technology; Capacitive sensors; Crystallization; FinFETs; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424363
