• DocumentCode
    1653018
  • Title

    Direct observation of trap behaviors during degradation and breakdown evolution in highly stressed SiO2 films by conductive atomic force microscopy

  • Author

    Zhang, Li ; Mitani, Yuichiro

  • Author_Institution
    Corp. Res. Dev. Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    2005
  • Firstpage
    600
  • Lastpage
    601
  • Keywords
    atomic force microscopy; dielectric thin films; electric breakdown; electron traps; silicon compounds; CAFM; FN-stress-induced trap behavior; SiO2; conductive atomic force microscopy; dielectric breakdown evolution; dielectric film degradation; electron trap generation; highly stressed films; negative charge detrapping; transient current component; trap behavior direct observation; trap centers/cathode substrate charge movement; trap defects lateral propagation; Atomic force microscopy; Conductive films; Degradation; Dielectric breakdown; Electric breakdown; Electron traps; Probes; Stress; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493162
  • Filename
    1493162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653018