DocumentCode :
1653147
Title :
Design and characterization of a novel high voltage power supply ESD protection
Author :
Reynders, K. ; Moens, P. ; Wojciechowski, D. ; Tack, M.
Author_Institution :
AMI Semicond. Belgium BVBA, Oudenaarde, Belgium
fYear :
2005
Firstpage :
610
Lastpage :
611
Keywords :
MOS integrated circuits; bipolar transistor circuits; electrostatic discharge; power integrated circuits; protection; bipolar snapback; high voltage VDMOS; high voltage power supply ESD protection; hybrid active clamp; latch-up safety; parasitic vertical bipolar transistor; smart power; vertical double-diffused MOS; Bipolar transistors; Breakdown voltage; Circuits; Clamps; Electronic ballasts; Electrostatic discharge; MOSFETs; Power supplies; Protection; Turning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493167
Filename :
1493167
Link To Document :
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