• DocumentCode
    1653296
  • Title

    Physical mechanism of high resistance of tungsten plug as a root cause of low yield and reliability issue in deep-sub-micron Si technology

  • Author

    Zhang, W. ; Tan, K.T.

  • Author_Institution
    Syst. on Silicon Manuf. Co. Pre. Ltd, Singapore, Singapore
  • fYear
    2005
  • Firstpage
    620
  • Lastpage
    621
  • Keywords
    ULSI; aluminium compounds; electric resistance; etching; integrated circuit interconnections; integrated circuit reliability; integrated circuit yield; outgassing; semiconductor device reliability; tungsten; AlF3; Si; ULSI device interconnects; W; capacitance increase; circuit reliability; deep-sub-micron Si technology; fluorine-containing polymer residue; interconnection complexity; lamp de-gas; multilayer design; multilayer fabrication; operating frequency; post-etch cleaning; post-etch treatment processes; tungsten plug resistance; vacuum bake; via etching; voltage drop; yield; Artificial intelligence; Etching; Failure analysis; Integrated circuit interconnections; Ohmic contacts; Plugs; Polymers; Tin; Tungsten; US Department of Energy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493172
  • Filename
    1493172
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653296