• DocumentCode
    1653467
  • Title

    Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack

  • Author

    Choi, Rino ; Lee, B.H. ; Young, C.D. ; Sim, J.H. ; Mathews, K. ; Bersuker, C. ; Zeitzoff, P.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2005
  • Firstpage
    636
  • Lastpage
    637
  • Keywords
    MOSFET; dielectric thin films; electron traps; elemental semiconductors; hafnium compounds; leakage currents; semiconductor device reliability; silicon; NMOS transistors; NMOSFET gate stack; Si-HfSiO; charge trapping; degradation polarity dependence; gate leakage; high-k dielectric reliability; interface defects; interface degradation; negative gate bias stress; positive bias stress; stress-induced dielectric wearout; substrate injection; subthreshold swing degradation; threshold voltage shift; trapped electrons; Annealing; Degradation; Dielectric substrates; Electron traps; Gate leakage; High-K gate dielectrics; Interface states; MOSFET circuits; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493180
  • Filename
    1493180
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653467