• DocumentCode
    1653530
  • Title

    Graphene for VLSI: FET and interconnect applications

  • Author

    Awano, Yuji

  • Author_Institution
    Keio Univ., Hiyoshi, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Because of their remarkable physical properties, graphene should be one of the most important Emerging Research Materials (ERM) for not only the front-end but also back-end devices of VLSIs for the next decade. In this paper, we discuss the present status of their material technologies and some issues to be addressed for realizing graphene channels and wiring devices for a future LSI.
  • Keywords
    VLSI; field effect transistors; graphene; interconnections; C; FET; VLSI; back-end devices; emerging research materials; graphene channels; interconnect applications; material technologies; wiring devices; CMOS technology; FETs; Fabrication; III-V semiconductor materials; Integrated circuit interconnections; Large scale integration; Materials science and technology; Organic materials; Temperature; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424381
  • Filename
    5424381