1653600

Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric

Park, H. ; Rahman, M.S. ; Chang, M. ; Lee, B.H. ; Gardner, M. ; Young, D. ; Hwang, H.

Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea

2005

646

647

MOSFET; annealing; deuterium; dielectric thin films; hot carriers; hydrogen; interface states; passivation; semiconductor device reliability; 1 atm; 100 atm; 400 degC; 5 to 20 atm; D₂; H₂; HfSiON; MOSFET electrical characteristics; high pressure deuterium annealing; high-k gate dielectrics; high-pressure annealing; hot carrier lifetime; interface state passivation; linear drain current; maximum transconductance; nMOSFET reliability; Annealing; Degradation; Deuterium; Dielectrics; Hydrogen; Interface states; MOSFET circuits; Materials science and technology; Tin; Transconductance;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493185

1493185