DocumentCode
165407
Title
Raman amplifier based on Si-nc
Author
Ferrara, M.A. ; Rendina, I. ; Sirleto, L.
Author_Institution
Unit of Napoli, Inst. for Microelectron. & Microsyst., Naples, Italy
fYear
2014
fDate
12-14 May 2014
Firstpage
1
Lastpage
4
Abstract
Nonlinear optical phenomena at nanoscale have recently become important in the research field of silicon photonics. Among these, stimulated Raman scattering is one of the most interesting, due to its significant implications from both fundamental and applicative point of view. In this work, comparison among experimental investigations of stimulated Raman scattering in amorphous silicon nanoparticles and in silicon micro- and nano-crystals, at the wavelengths of interest for telecommunications, are reported. The physical insight related to different nanostructures are discussed and their Raman gain and bandwidth are compared to an ideal material.
Keywords
amorphous state; micro-optics; nanoparticles; nanophotonics; nonlinear optics; optical materials; silicon; stimulated Raman scattering; Raman amplifier; Raman gain; Si; Si-nc; amorphous silicon nanoparticles; applicative point of view; bandwidth; fundamental point of view; ideal material; nonlinear optical phenomena; silicon microcrystals; silicon nanocrystals; silicon photonics; stimulated Raman scattering; telecommunication wavelengths; Nanostructured materials; Nonlinear optics; Optical imaging; Optical scattering; Photonics; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Technologies, 2014 Fotonica AEIT Italian Conference on
Conference_Location
Naples
Print_ISBN
978-8-8872-3718-4
Type
conf
DOI
10.1109/Fotonica.2014.6843845
Filename
6843845
Link To Document