1654186

Copper via chain under etching process improvement

Ji, Jackie ; Zhang, Mark ; Dong, Walden ; Guo, Annie ; Liang, Sanan ; Liao, Scott ; Niou, Chorng ; Chien, Kary

Reliability Div., Semicond. Manuf. Int. Corp., Shanghai, China

2005

688

689

etching; failure analysis; focused ion beam technology; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; transmission electron microscopy; Cu; FIB; OBIRCH; PVC; TEM; WAT test structure; dual damascene process; etching process improvement; failure analysis; fault isolation methods; focused ion beam; localized via chain under etching; optical beam induced resistance change; passive voltage contrast; transmission electron microscope; via chain open failures; wafer accept test; Aluminum; Conductivity; Copper; Etching; Fabrication; Failure analysis; Plasma applications; Scanning electron microscopy; Silicon compounds; Testing;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493206

1493206