Contact-dependent susceptibility and immunity to short-channel effects in monolayer MoS2 field-effect transistors

By performing self-consistent quantum transport simulations using non-equilibrium Green´s function (NEGF) formalism, monolayer molybdenum disulfide (MoS₂) field-effect transistors (FETs) with different types of contacts are investigated. We show that a MoS₂ transistor with doped reservoirs (MOSFET) is in general more favorable than a device with metal contacts (SBFET). In carefully designed switching conditions, a MoS₂ MOSFET has 67% higher ON current, 48% larger transconductance, 17% less output conductance, and subthreshold swing closer to 60 mV/dec, as compared to the SBFET counterpart. While both devices show significant loss in subthreshold swing and transconductance with extensive scaling (L_ch <; 6 nm), the MOSFET is more robust to short-channel effects.