• DocumentCode
    1654331
  • Title

    Chalcogenide PCM: a memory technology for next decade

  • Author

    Bez, Roberto

  • Author_Institution
    R&D Technol. Dev., Numonyx, Milan, Italy
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Phase Change Memory (PCM) technology is demonstrating the capability to enter the broad memory market and to be a mainstream memory for the next decade. PCM provides a new set of features interesting for novel applications, combining components of NVM and DRAM and being at the same time a sustaining and a disruptive technology. In this paper the PCM technology status is reviewed and future development lines are drawn, showing that the technology maturity achieved, the scaling perspective and the broad application range allow predicting a key role for the PCM technology in the memory market in the next decade.
  • Keywords
    DRAM chips; phase change memories; DRAM; NVM; chalcogenide PCM; nonvolatile memory; phase change memory; Application software; Computer applications; Consumer electronics; Costs; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Research and development; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424415
  • Filename
    5424415