DocumentCode
1654331
Title
Chalcogenide PCM: a memory technology for next decade
Author
Bez, Roberto
Author_Institution
R&D Technol. Dev., Numonyx, Milan, Italy
fYear
2009
Firstpage
1
Lastpage
4
Abstract
Phase Change Memory (PCM) technology is demonstrating the capability to enter the broad memory market and to be a mainstream memory for the next decade. PCM provides a new set of features interesting for novel applications, combining components of NVM and DRAM and being at the same time a sustaining and a disruptive technology. In this paper the PCM technology status is reviewed and future development lines are drawn, showing that the technology maturity achieved, the scaling perspective and the broad application range allow predicting a key role for the PCM technology in the memory market in the next decade.
Keywords
DRAM chips; phase change memories; DRAM; NVM; chalcogenide PCM; nonvolatile memory; phase change memory; Application software; Computer applications; Consumer electronics; Costs; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Research and development; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4244-5639-0
Electronic_ISBN
978-1-4244-5640-6
Type
conf
DOI
10.1109/IEDM.2009.5424415
Filename
5424415
Link To Document