DocumentCode :
1654481
Title :
The energy driven paradigm of nMOSFET hot carrier effects
Author :
Rauch, Stewart E., III ; Rosa, Giuseppe La
Author_Institution :
Semicond. R&D Center, IBM Microelectron., Hopewell Junction, NY, USA
fYear :
2005
Firstpage :
708
Lastpage :
709
Keywords :
MOSFET; ballistic transport; hot carriers; impact ionisation; interface states; semiconductor device models; NMOSFET scaling; electron energy distribution; high field region quasi-ballistic transport; hot carrier effects energy driven paradigm; hot carrier lifetimes; impact ionization ratio measurements; interface state generation cross section; Electrons; Hot carrier effects; Hot carriers; Impact ionization; Interface states; Knee; MOSFET circuits; Scattering; Tin; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493216
Filename :
1493216
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1654481
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