Title :
Silicon single hole quantum dot transistors for complementary digital circuits
Author :
Leobandung, Effendi ; Guo, Lingjie ; Chou, Stephen Y.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Novel p-channel quantum-dot transistors were fabricated in silicon-on-insulator (SOI). Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. Measurements show that the average energy level spacing is approximately 33 meV and it is due to both single hole charging effect and quantum confinement effect. A digital inverter using a complementary pair of n and p-channel quantum dot transistors is also proposed
Keywords :
digital integrated circuits; elemental semiconductors; logic gates; oscillations; quantum interference devices; semiconductor quantum dots; silicon-on-insulator; tunnel transistors; 66 mV; 81 K; SOI; Si; complementary digital circuits; complementary pair; digital inverter; drain current oscillations; gate voltage; n-channel quantum dot transistors; p-channel quantum-dot transistors; quantum confinement effect; single hole charging effect; single hole quantum dot transistors; Digital circuits; Electrons; Fabrication; Inverters; Potential well; Quantum dots; Silicon; Temperature; US Department of Transportation; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499216
