• DocumentCode
    1654565
  • Title

    MOSFET asymmetry and gate-drain/source overlap effects on hot carrier reliability

  • Author

    Aur, Shim ; Yang, Shyh-Homg ; Tran, Toan

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    2005
  • Firstpage
    714
  • Lastpage
    715
  • Keywords
    MOSFET; hot carriers; semiconductor device models; semiconductor device reliability; 90 nm; MOSFET asymmetry; gate-drain/source overlap effects; hot carrier reliability; performance/reliability trade-off; Degradation; Doping profiles; Equations; Etching; Hot carriers; Implants; Instruments; MOSFET circuits; Neodymium; Surface fitting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493219
  • Filename
    1493219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654565