Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

Author

Chen, Kevin J. ; Maezawa, Koichi ; Yamamoto, Masafumi

Author_Institution

NTT LSI Labs., Atsugi, Japan

fYear

1995

Firstpage

379

Lastpage

382

Abstract

We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate

Keywords

III-V semiconductors; frequency multipliers; high electron mobility transistors; indium compounds; logic gates; negative resistance devices; resonant tunnelling transistors; ternary logic; InP; InP-based RTHEMT; circuit applications; current-voltage characteristics; frequency multipliers; high electron mobility transistor; negative transconductance; resistor load; resonant-tunneling HEMT; resonant-tunneling diode structure; source region; source-drain bias; three-valued logic inverse literal gate; Circuits; Current-voltage characteristics; Diodes; Frequency; HEMTs; Logic gates; MODFETs; Resistors; Resonant tunneling devices; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499219

Filename

499219