• DocumentCode
    165482
  • Title

    Effects of HNO3 molecular doping in graphene/Si Schottky barrier solar cells

  • Author

    Lancellotti, L. ; Bobeico, E. ; Capasso, Andrea ; Della Noce, M. ; Dikonimos, Theodoros ; Lisi, Nicola ; Delli Veneri, Paola

  • Author_Institution
    UTTP-MDB, Mater. & devices, ENEA-Portici Res. Center, Rome, Italy
  • fYear
    2014
  • fDate
    12-14 May 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Schottky barrier solar cells based on graphene/n-silicon heterojunction have been fabricated and characterized and the effect of graphene molecular doping by HNO3 on the solar cells performances have been analyzed. Different doping conditions and thermal annealing processes have been tested to asses and optimize the stability of the devices. The PCE of the cells increases after the treatment by HNO3 and reaches 5% in devices treated at 200 °C immediately before the exposition to the oxidant. Up to now our devices retain about 80% of efficiency over a period of two weeks, which represents a good stability result for similar devices.
  • Keywords
    Schottky diodes; annealing; doping; elemental semiconductors; graphene; hydrogen compounds; silicon; solar cells; C:HNO3-Si; device stability; graphene-Si Schottky barrier solar cells; molecular doping; oxidants; temperature 200 degC; thermal annealing; Aging; Annealing; Doping; Graphene; Silicon; Schottky barrier; chemical doping; graphene; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Technologies, 2014 Fotonica AEIT Italian Conference on
  • Conference_Location
    Naples
  • Print_ISBN
    978-8-8872-3718-4
  • Type

    conf

  • DOI
    10.1109/Fotonica.2014.6843898
  • Filename
    6843898