DocumentCode
165482
Title
Effects of HNO3 molecular doping in graphene/Si Schottky barrier solar cells
Author
Lancellotti, L. ; Bobeico, E. ; Capasso, Andrea ; Della Noce, M. ; Dikonimos, Theodoros ; Lisi, Nicola ; Delli Veneri, Paola
Author_Institution
UTTP-MDB, Mater. & devices, ENEA-Portici Res. Center, Rome, Italy
fYear
2014
fDate
12-14 May 2014
Firstpage
1
Lastpage
3
Abstract
Schottky barrier solar cells based on graphene/n-silicon heterojunction have been fabricated and characterized and the effect of graphene molecular doping by HNO3 on the solar cells performances have been analyzed. Different doping conditions and thermal annealing processes have been tested to asses and optimize the stability of the devices. The PCE of the cells increases after the treatment by HNO3 and reaches 5% in devices treated at 200 °C immediately before the exposition to the oxidant. Up to now our devices retain about 80% of efficiency over a period of two weeks, which represents a good stability result for similar devices.
Keywords
Schottky diodes; annealing; doping; elemental semiconductors; graphene; hydrogen compounds; silicon; solar cells; C:HNO3-Si; device stability; graphene-Si Schottky barrier solar cells; molecular doping; oxidants; temperature 200 degC; thermal annealing; Aging; Annealing; Doping; Graphene; Silicon; Schottky barrier; chemical doping; graphene; solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Technologies, 2014 Fotonica AEIT Italian Conference on
Conference_Location
Naples
Print_ISBN
978-8-8872-3718-4
Type
conf
DOI
10.1109/Fotonica.2014.6843898
Filename
6843898
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