Title :
Single-crystal CuIn1−xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
Author :
Colace, Lorenzo ; Bronzoni, M. ; De Iacovo, Andrea ; Frigeri, P. ; Gombia, E. ; Maragliano, C. ; Mezzadri, F. ; Nasi, L. ; Pattini, F. ; Rampino, S. ; Seravalli, L. ; Trevisi, G.
Author_Institution :
Dipt. di Ing., Univ. degli Studi Roma TRE, Rome, Italy
Abstract :
We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5μm. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells.
Keywords :
X-ray diffraction; copper compounds; electron beam deposition; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; ternary semiconductors; transmission electron microscopy; vapour phase epitaxial growth; CuIn1-xGaxSe2; Ge; X-ray diffraction; absorber layer; epilayers; epitaxial growth; lattice-matched Ge; low-temperature pulsed electron deposition; multijunction thin film solar cells; n-type Ge substrates; photoluminescence; single junction thin film solar cells; single-crystal thin films; smooth interface; temperature 300 degC; transmission electron microscopy; Coils; Electric potential; Epitaxial growth; Microscopy; Photovoltaic cells; Radio frequency; CIGS; epitaxial CIGS; low-temperature epitaxy; thin film solar cells;
Conference_Titel :
Photonics Technologies, 2014 Fotonica AEIT Italian Conference on
Conference_Location :
Naples
Print_ISBN :
978-8-8872-3718-4
DOI :
10.1109/Fotonica.2014.6843938
