Title :
Impact of Coulomb blockade on low-charge limit of memory device
Author :
Yano, Kazuo ; Ishii, Tomoyuki ; Sano, Toshiaki ; Mine, Toshiyuki ; Murai, Fumio ; Seki, Koichi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Using a new single-electron memory device having much better control of poly-Si and gate oxide than the reported one, stored-charge probability distribution is directly measured for the first time. This is made possible by the real-time electron counting capability of the memory device. The standard deviation of charge is found to be 0.6 electrons, which clearly demonstrates single-electron-level control capability of our device. The results agree excellently with our new dynamic Coulomb blockade model. Based on these results, the minimum number of stored electrons satisfying 1000-fit 1Gb reliability is revealed to be five
Keywords :
integrated memory circuits; quantum interference devices; quantum interference phenomena; semiconductor device models; semiconductor storage; single electron transistors; tunnel transistors; Coulomb blockade; Si; dynamic Coulomb blockade model; gate oxide; low-charge limit; poly-Si; polysilicon; real-time electron counting capability; single-electron memory device; stored-charge probability distribution; Centralized control; Current measurement; Flash memory; Laboratories; Silicon; Single electron memory; Stochastic processes; Temperature; Ultra large scale integration; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499253
