Title :
A novel geometry based MRAM PUF
Author :
Das, J. ; Scott, K. ; Burgett, D. ; Rajaram, S. ; Bhanja, S.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
In this paper we have proposed a novel MRAM based physically unclonable function (PUF) using the uncontrollable geometric variation in MRAM cells. The geometric variations generate a preferred ground state in every MRAM cell that we have used for the novel PUF. We have also analyzed the security properties of this PUF using a combination of simulation and fabrication methods. Results show an intra-distance of 0.0225 and an inter-distance of 0.47 for this PUF.
Keywords :
MRAM devices; geometry; ground states; MRAM cell; PUF interdistance; PUF intradistance; fabrication methods; ground state; physically unclonable function; security properties; uncontrollable geometric variation; Arrays; Couplings; Geometry; Magnetic tunneling; Scanning electron microscopy; Shape; Stationary state; MRAM; PUF; easy axis; energy; geometric variations; process variations; randomness;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6968027
