• DocumentCode
    1655810
  • Title

    Study on solid state reaction of TiN/Co/Ti multi-layer with amorphous silicon

  • Author

    Fang, Hua ; Li, Bing-Zong ; Yu, Wei-Feng ; Huang, Wei-Ning ; Shao, Kai ; Wu, Wei-Jun ; Gu, Zhi-Guang ; Jiang, Guo-Bao

  • Author_Institution
    Dept. of Electron. Eng., Fudan Univ., Shanghai, China
  • fYear
    1995
  • Firstpage
    44
  • Lastpage
    46
  • Abstract
    Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi2 with good thermal stability and smooth surface can be obtained after thermal annealing
  • Keywords
    Auger effect; X-ray diffraction; annealing; cobalt; cobalt compounds; metallisation; scanning electron microscopy; thermal stability; titanium; titanium compounds; CoSi2; PECVD amorphous Si; Si; TiN-Co-Ti; TiN/Co/Ti multi-layer; smooth surface; solid state reaction; thermal annealing; thermal stability; uniform polycrystalline CoSi2; Amorphous silicon; Annealing; Plasma temperature; Silicides; Solid state circuits; Surface resistance; Thermal loading; Thermal resistance; Thermal stability; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.499266
  • Filename
    499266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1655810