DocumentCode :
1656236
Title :
On-chip metal wire grid polarizer for CMOS image sensor based on 65-nm technology
Author :
Sasagawa, Kiyotaka ; Ando, Keisuke ; Matsuoka, Hitoshi ; Kobayashi, Takuma ; Noda, Toshihiko ; Tokuda, Takashi ; Ohta, Jun
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
fYear :
2012
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate complementary metal-oxide-semiconductor (CMOS) image sensor pixels with on-chip polarizer fabricated by a standard 65-nm CMOS technology. The extinction ratio of 94 at a wavelength of 750 nm was achieved.
Keywords :
CMOS image sensors; optical design techniques; optical polarisers; CMOS image sensor; extinction ratio; on-chip metal wire grid polarizer; size 65 nm; wavelength 750 nm; CMOS image sensors; CMOS integrated circuits; Extinction ratio; Metals; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
Type :
conf
Filename :
6325758
Link To Document :
بازگشت