Title :
Synthesis of one-dimensional (1D) Ge-based ternary oxide nanostructures
Author :
Chaoyi, Yan ; See, Lee Pooi
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Ternary complex oxide nanostructures of Ge-based materials, such as indium germanate (In2Ge2O7, IGO) and zinc germanate (Zn2GeO4, ZGO), were successfully synthesized by a chemical vapor transport method. Morphologies of the nanostructures can be efficiently tuned by controlling the growth conditions, and various 1D nanostructures of the germanates (nanotubes, nanowires, nanobelts and hierarchical nanostructures) were synthesized. Structures and compositions of the nanostructures were characterized by SEM, TEM, XRD and EDS. It is believed that this method can be generalized for the synthesized of other complex oxide nanomaterials. The novel 1D oxide nanomaterials possess their potential applications in nanoelectronic and optoelectronic devices.
Keywords :
X-ray chemical analysis; X-ray diffraction; indium compounds; nanobelts; nanotubes; nanowires; scanning electron microscopy; transmission electron microscopy; zinc compounds; 1D ternary oxide nanostructures; In2Ge2O7; X-ray diffraction; Zn2GeO4; chemical vapor transport method; energy dispersive spectroscopy; hierarchical nanostructures; indium germanate; nanobelts; nanotubes; nanowires; scanning electron microscopy; transmission electron microscopy; zinc germanate; Chemicals; Indium; Morphology; Nanomaterials; Nanostructured materials; Nanostructures; Nanotubes; Nanowires; X-ray scattering; Zinc;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424513